parametric-filter Switches & multiplexers.

parametric-filter Microcontrollers (MCUs) & processors.

parametric-filter Logic & voltage translation.

The device is offered in 5-pin SOT-23 and SC70 packages. The temperature range is specified from –40☌ to +125☌. The JFE150 can withstand a high drain-to-source voltage of 40 V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high-leakage, nonlinear, external diodes. When biased at 5 mA, the device yields 0.8 nV/√ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 ♚ to 20 mA.

The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments modern, high-performance, analog bipolar process. High gate-to-drain and gate-to-source breakdown voltage: –40 V Low input capacitance: 24 pF at V DS = 5 V parametric-filter Transimpedance amplifiers.parametric-filter Transconductance amplifiers & laser drivers.parametric-filter Sample & hold amplifiers.parametric-filter Logarithmic amplifiers.parametric-filter High-performance transistors.parametric-filter 4-20mA signal conditioners.parametric-filter Special function amplifiers.parametric-filter Programmable & variable gain amplifiers (PGAs & VGAs).parametric-filter Operational amplifiers (op amps).

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